Leakage Current in p-Substrate 1.3μm InGaAsP/InP
نویسندگان
چکیده
منابع مشابه
Theoretical and Experimental Analysis of Leakage Current in InGaAsP BH Lasers with p-n-p-n Current Blocking Layers
The dependence of the leakage current in 1.3m InGaAsP buried heterostructure (BH) lasers with p-n-p-n current blocking layers on well number, mesa width, and carrier density has been analyzed using a two-dimensional device simulator and compared with the electroluminescence (EL) emitted from InP layers. The analysis of the minority carrier flow reveals that the electron current flowing through ...
متن کاملMinimization of Leakage Current in VLSI Design
To meet the ever-increasing demand of high performance systems, more and more functions are integrated into single chip by scaling down the size of device. Leakage current is becoming an increasingly important fraction of total power dissipation of integrated circuits. As technology scales leakage current grows exponentially and become and increasingly large component of total power dissipation...
متن کاملLeakage Current Reduction in VLSI Systems
There is a growing need to analyze and optimize the stand-by component of power in digital circuits designed for portable and battery-powered applications. Since these circuits remain in stand-by (or sleep) mode significantly longer than in active mode, their stand-by current, and not their active switching current, determines their battery life. Hence, stringent specifications are being placed...
متن کاملLeakage Current in Sub-Micrometer CMOS Gates
Static power consumption is nowadays a crucial design parameter in digital circuits due to emergent mobile products. Leakage currents, the main responsible for static power dissipation during idle mode, are increasing dramatically in sub-100nm processes. Subthershold leakage rises due to threshold voltage scaling while gate leakage current increases due to scaling of oxide thickness. It means t...
متن کاملLeakage Current in Deep-Submicron CMOS Circuits
The high leakage current in deep submicron regimes is becoming a significant contributor to the power dissipation of CMOS circuits as the threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for the estimation and reduction of leakage power, especially in the low power application...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Review of Laser Engineering
سال: 1985
ISSN: 0387-0200,1349-6603
DOI: 10.2184/lsj.13.156